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dc.contributor.authorYazdanian, Mohammad Mehdi.en_US
dc.date.accessioned2009-07-14T19:41:51Z
dc.date.available2009-07-14T19:41:51Z
dc.date.issued2004-07-14T19:41:51Z
dc.identifier.urihttp://hdl.handle.net/10464/2309
dc.description.abstractSrMg^Rui-iOa thin films were made by using pulsed laser deposition on SrTiOa (100) substrates in either O2 or Ar atmosphere. The thin films were characterized by x-ray diffraction, energy dispersive x-ray microanalysis, dc resistivity measurement, and dc magnetization measurement. The effect of Mg doping was observed. As soon as the amount of Mg increased in SrMg-cRui-iOa thin films, the magnetization decreased, and the resistivity increased. It had little effect on the Curie temperature (transition temperature). The magnetization states of SrMgiRui-iOa thin films, for x < 0.15, are similar to SrRuOs films. X-ray diffraction results for SrMga-Rui-iOa thin films made in oxygen showed that the films are epitaxial. The thin films could not be well made in Ar atmosphere during laser ablation as there was no clear peak of SrMg^Rui-iOa in x-ray diffraction results. Substrate temperatures had an effect on the resistivity of the films. The residual resistivity ratios were increased by increasing substrate temperature. It was observed that the thickness of thin films are another factor for film quality: Thin films were epitaxial, but thicker films were not epitaxial.en_US
dc.language.isoengen_US
dc.publisherBrock Universityen_US
dc.subjectThin films.en_US
dc.subjectPulsed laser deposition.en_US
dc.titlePreparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition /en_US
dc.typeElectronic Thesis or Dissertationen_US
dc.degree.nameM.Sc. Physicsen_US
dc.degree.levelMastersen_US
dc.contributor.departmentDepartment of Physicsen_US
dc.degree.disciplineFaculty of Mathematics and Scienceen_US


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