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dc.contributor.authorSepiedeh, Pirasteh
dc.date.accessioned2012-05-17T15:05:16Z
dc.date.available2012-05-17T15:05:16Z
dc.date.issued2012-05-17
dc.identifier.urihttp://hdl.handle.net/10464/4011
dc.description.abstractWe report the results of crystal structure, magnetization and resistivity measurements of Bi doped LaVO3. X-ray diffraction (XRD) shows that if doping Bi in the La site is less than ten percent, the crystal structure of La1-xBixVO3 remains unchanged and its symmetry is orthorhombic. However, for higher Bi doping (>10%) composite compounds are found where the XRD patterns are characterized by two phases: LaVO3+V2O3. Energy-dispersive analysis of the x-ray spectroscopy (EDAX) results are used to find a proper atomic percentage of all samples. The temperature dependence of the mass magnetization of pure and single phase doped samples have transition temperatures from paramagnetic to antiferromagnetic region at TN=140 K. This measurement for bi-phasic samples indicates two transition temperatures, at TN=140 K (LaVO3) and TN=170 K (V2O3). The temperature dependence of resistivity reveals semiconducting behavior for all samples. Activation energy values for pure and doped samples are extracted by fitting resistivity versus temperature data in the framework of thermal activation process.en_US
dc.language.isoengen_US
dc.publisherBrock Universityen_US
dc.subjectDoped LaVO3en_US
dc.subjectEnergy dispersive analysis of x-raysen_US
dc.subjectX-ray diffractionen_US
dc.subjectMagnetic and electrical propertiesen_US
dc.titleCrystallinity, Magnetic and Electrical Properties of Bi doped LaVO3en_US
dc.typeElectronic Thesis or Dissertationen_US
dc.degree.nameM.Sc. Physicsen_US
dc.degree.levelMastersen_US
dc.contributor.departmentDepartment of Physicsen_US
dc.degree.disciplineFaculty of Mathematics and Scienceen_US


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