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dc.contributor.authorKhin, Phyu Phyu.en_US
dc.date.accessioned2009-07-09T18:43:00Z
dc.date.available2009-07-09T18:43:00Z
dc.date.issued1972-07-09T18:43:00Z
dc.identifier.urihttp://hdl.handle.net/10464/2066
dc.description.abstractSiC and AtB 12 have been prepared and their resistivities and Hall voltages measured. The resistivities and Hall voltages were measured by the Van der Pauw's method, using spring loaded tungsten contacts. In this method, the major requirement is to have samples of plane parallel surfaces of arbitrary shape with four small contacts at the circumference. Similar measurements were made with a number of SiC crystals obtained from the Norton Research Corporation (Canada)-Ltd., Carolina Aluminum Co., Exolon Co. and Carborundum Co. It was found that resistivity, carrier concentration and mobility of ions depend on the type of impurity. AtB 12 was prepared from the melt containing At and B in the ratio of 4:1. They formed amber-colour pseudo tetragonal crystals. As the crystals obtained were small for electrical measurements, hot pressed lumps have been used to measure their resistivity.en_US
dc.language.isoengen_US
dc.publisherBrock Universityen_US
dc.subjectCrystals--Electric properties.en_US
dc.subjectSemiconductors.en_US
dc.titleSome electrical properties of semi-conductor crystals / |nPhyu Phyu Khin. -- 260 St. Catharines, Ont. : [s. n.],en_US
dc.typeElectronic Thesis or Dissertationen_US
dc.degree.nameM.Sc. Chemistryen_US
dc.degree.levelMastersen_US
dc.contributor.departmentDepartment of Chemistryen_US
dc.degree.disciplineFaculty of Mathematics and Scienceen_US


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