Abstract:
Perovskite type piezoelectric and manganese oxide materials have gained a lot of attention
in the field of device engineering. Lead zirconium titananium oxide (PbZri.iTiiOa or PZT)
is a piezoelectric material widely used as sensors and actuators. Miniaturization of PZTbased
devices will not only perfect many existing products, but also opens doors to new
applications. Lanthanum manganese oxides Lai-iAiMnOa (A-divalent alkaline earth such
as Sr, Ca or Ba) have been intensively studied for their colossal magnetoresistance (CMR)
properties that make them applicable in memory cells, magnetic and pressure sensors. In
this study, we fabricate PZT and LSMO(LCMO) heterostructures on SrTiOa substrates
and investigate their temperature dependency of resistivity and magnetization as a function
of the thickness of LSMO(LCMO) layer. The microstructure of the samples is analysed
through TEM. In another set of samples, we study the effect of application of an electric
field across the PZT layer that acts as an external pressure on the manganite layer. This
verifies the correlation of lattice distortion with transport and magnetic properties of the
CMR materials.
